semihow rev.a1,march 2013 HTP12A60H_htp12a80h t2 t1 g features ? repetitive peak off - state voltage : 600v/800v ? r.m.s on ? state current (i t(rms) = 12a) ? gate trigger current : 35ma ? high commutation capability. applications general purpose of ac switching, heating control, motor control, etc general description semihow?s standard triac product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage . it is generally suitable for power and phase control in ac application HTP12A60H/htp12a80h 3 quadrants standard triac v drm = 600v/800v i t(rms) = 12 a i tsm = 126 a i gt = 35ma symbol absolute maximum ratings (t j =25 unless otherwise specified ) symbol parameter conditions ratings unit HTP12A60H htp12a80h v drm repetitive peak off - state voltage sine wave, 50/60hz, gate open 600 800 v v rrm repetitive peak reverse voltage 600 800 v i t(av) average on - state current full sine wave, t c = 85.7 o c 10.8 a i t(rms) r.m.s. on - state current 12 a i tsm surge on - state current ? cycle, 50hz/60hz, sine wave, non repetitive 120/126 a i 2 t fusing current t = 10ms 72 a 2 s p gm forward peak g ate power dissipation t j = 125 c 5 w p g(av) forward average gate power dissipation t j = 125 c, over any 20ms 0.5 w i fgm forward peak gate current t j = 125 c, pulse width 20us 2 a v rgm reverse peak gate voltage t j = 125 c, pulse width 20us 5 v t j operating junction temperature - 40~+ 150 o c t stg storage temperature - 40~+150 o c to - 220
semihow rev.a1,march 2013 HTP12A60H_htp12a80h electrical characteristics ( t j =25 unless otherwise specified ) thermal characteristics symbol parameter conditions min typ max unit r jc thermal resistance junction to case 2.5 o c /w r ja thermal resistance junction to ambient 58 o c /w notes : 1. pulse width 1.0ms, duty cycle 1% symbol parameter conditions min typ max unit i drm repetitive peak off - state current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i rrm repetitive peak reverse current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i gt gate trigger current v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 35 ma v gt gate trigger voltage v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 1.5 v v gd non - trigger gate voltage 1 v d = 12v, r l =330 ? , t j =125 o c 0.2 - - v v tm peak on - state voltage i t = 17a, i g = 20ma - 1.2 1.4 v dv/ dt critical rate of rise of off - state voltage v d = 2/3 v drm , t j =125 o c 40 - - v/us i h holding current i t = 0.2a - 45 - ma
semihow rev.a1,march 2013 HTP12A60H_htp12a80h typical characteristics fig 1. r.m.s. current vs. power dissipation fig 2. r.m.s. current vs. case temperature fig 3. gate power characteristics fig 4. surge on state current rating (non - repetitive) fig 5. gate trigger current vs. junction temperature fig 6. gate trigger voltage vs. junction temperature 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 80 90 100 110 120 130 180 o 150 o 120 o 90 o 60 o maximum allowable case temperature, t c [ o c] r.m.s. on state current, i t(rms) [a] 30 o 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0 2 4 6 8 10 12 14 16 30 o 60 o 90 o 120 o 150 o power dissipation, p d [w] r.m.s. on state current, i t(rms) [a] 180 o 10 0 10 1 10 2 0 20 40 60 80 100 120 140 160 50hz 60hz surge on state current, i tsm [a] time [cycles] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 25[ o c] i + gt1 i - gt1 i - gt3 p g(av) (0.5w) p gm (5w) v gd gate voltage, v g [v] gate current, i g [ma] -50 -25 0 25 50 75 100 125 150 0 1 2 x 100 (%) igt(t o c) igt(25 o c) junction temperature, t j [ o c] i + gt1 i - gt1 i - gt3 -50 -25 0 25 50 75 100 125 150 0 1 2 junction temperature, t j [ o c] v + gt1 v - gt1 v - gt3 x 100 (%) igt(t o c) igt(25 o c)
semihow rev.a1,march 2013 HTP12A60H_htp12a80h 10 -2 10 -1 10 0 10 1 10 -1 10 0 10 1 thermal impedance [ o c/w] pulse time [sec] 0 1 2 3 4 10 -1 10 0 10 1 10 2 25 o c instantaneou on state current, i t [a] instantaneou on state voltage, v t [v] 150 o c -50 -25 0 25 50 75 100 125 150 0 1 2 junction temperature, t j [ o c] x 100(%) i h (t o c) i h (25 o c) typical characteristics fig 7. holding current vs. junction temperature fig 8. thermal impedance vs. pulse time fig 9. instantaneous on state current vs. instantaneous on state voltage r g r l v dd v g (1) quadrant i r g r l v dd v g (2) quadrant ii r g r l v dd v g (3) quadrant iii r g r l v dd v g (4) quadrant iv measurement of gate trigger current note. whole parameter and test condition can not be over absolute maximum ratings in this datasheet. r s =0.035 ? v to =0.85v
semihow rev.a1,march 2013 HTP12A60H_htp12a80h package dimension 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ to - 220 (a)
semihow rev.a1,march 2013 HTP12A60H_htp12a80h 0.20 2.74 0.20 15.44 0.20 13.28 0.20 2.67 0.20 6.30 0.20 0.81 0.20 1.27 0.20 1.27 0.20 4.57 0.20 0.40 0.20 2.67 0.20 9.14 0.20 3.84 0.20 2.54typ 2.54typ to - 220 (b) package dimension
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